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 UTC D882SS
NPN EPITAXIAL SILICON TRANSISTOR
MEDIUM POWER LOW VOLTAGE TRANSISTOR
FEATURES
*High current output up to 3A *Low saturation voltage *Complement to B772SS
2 1
APPLICATIONS
* Audio power amplifier * DC-DC convertor * Voltage regulator
3
MARKING
SOT-23
D82
1: EMITTER 2: BASE 3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified )
PARAMETERS
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector dissipation( Tc=25C) Collector dissipation( Ta=25C) Collector current(DC) Collector current(PULSE) Base current Junction Temperature Storage Temperature
SYMBOL
VCBO VCEO VEBO Pc Pc Ic Ic IB Tj TSTG
RATING
40 30 5 10 1 3 7 0.6 150 -55 ~ +150
UNIT
V V V W W A A A C C
ELECTRICAL CHARACTERISTICS(Ta=25C,unless otherwise specified)
PARAMETER
Collector cut-off current Emitter cut-off current DC current gain(note 1) Collector-emitter saturation voltage Base-emitter saturation voltage Current gain bandwidth product Output capacitance
SYMBOL
ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob
TEST CONDITIONS
VCB=30V,IE=0 VEB=3V,Ic=0 VCE=2V,Ic=20mA VCE=2V,Ic=1A Ic=2A,IB=0.2A Ic=2A,IB=0.2A VCE=5V,Ic=0.1A VCB=10V,IE=0,f=1MHz
MIN
TYP
MAX
1000 1000
UNIT
nA nA
30 100
200 150 0.3 1.0 80 45
400 0.5 2.0
V V MHz pF
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R206-018,A
UTC D882SS
NPN EPITAXIAL SILICON TRANSISTOR
Note 1:Pulse test:PW<300s,Duty Cycle<2%
CLASSIFICATION OF hFE2
RANK RANGE Q 100-200 P 160-320 E 200-400
TYPICAL PARAMETERS PERFORMANCE
Fig.1 Static characteristics
150
Fig.2 Derating curve of safe operating areas
12
Fig.3 Power Derating
-Ic,Collector current(A)
1.6
1.2
-IB=6mA -IB=5mA
100
Power Dissipation(W)
150 200
- Ic Derating(%)
-IB=9mA -IB=8MA -IB=7mA
S/ b
8
0.8
lim ite d
D pa si is
-IB=4mA -IB=3mA -IB=2mA -IB=1mA
50
4
n tio
0.4
lim d ite
0 0 4 8 12 16 20
0 -50 0 50 100
0 -50 0 50 100 150 200
-Collector-Emitter voltage(V)
Tc,Case Temperature(C)
Tc,Case Temperature(C)
Fig.4 Collector Output capacitance
3 10 3 10
Fig.5 Current gainbandwidth product
1 10
Fig.6 Safe operating area
Ic(max),Pulse Ic(max),DC
10 mS 1m S
S 1m 0.
Output Capacitance(pF)
FT(MHz), Current gainbandwidth product
2 10
IE=0 f=1MHz
VCE=5V
2 10
-Ic,Collector current(A)
0 1 10
10
0
IB=8mA
1 10
1 10
-1 10
0 10 10
0
-1 10
-2 10
-3 10
0 10
-2 10
-1 10
-2 10 10
10
0
1 10
2 10
-Collector-Base Voltage(v)
Ic,Collector current(A)
Collector-Emitter Voltage
Fig.7 DC current gain
3 10 4 10
Fig.8 Saturation Voltage
VCE=-2V -Saturation Voltage(mV)
DC current Gain,H FE
3 10
VBE(sat)
2 10
2 10
1 10
VCE(sat)
1 10
0 10 0 10 1 10 2 10 3 10 4 10
0 10
0 10
1 10
2 10
3 10
4 10
-Ic,Collector current(mA)
-Ic,Collector current(mA)
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
QW-R206-018,A
UTC D882SS
NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
3
QW-R206-018,A
UTC D882SS
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO. LTD
4
QW-R206-018,A


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